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March 2010
FDD3672
N-Channel UltraFET ? Trench MOSFET
100V, 44A, 28m ?
Features
? r DS(ON) = 24m ? (Typ.), V GS = 10V, I D = 44A
? Q g (tot) = 24nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Qrr Body Diode
? Optimized efficiency at high frequencies
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82760
DRAIN
(FLANGE)
GATE
SOURCE
Applications
? DC/DC converters and Off-Line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V Systems
? High Voltage Synchronous Rectifier
D
G
TO-252AA
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
100
± 20
Units
V
V
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
44
A
C
I D
E AS
P D
T J , T STG
Continuous (T C = 100 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
31
6.5
Figure 4
120
135
0.9
-55 to 175
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
R θJC
R θ JA
R θ JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
2
1.11
100
52
o
o
o
C/W
C/W
C/W
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2010 Fairchild Semiconductor Corporation
FDD3672 Rev. A 2
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